T6: MOSFETs: Physics, Simulation and Modeling
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| Educator |
Dr. Vincent Chang |
| Number of Lectures |
12 |
| Course Length |
21 Hours |
| Units |
2.1 CEU |
| Access Time |
30 Days |
| Course Language |
English slide with Chinese Mandarin audio |
Fee |
$142.15 |
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| This course is intended for Chinese or Chinese American industry professionals interested in updating or refreshing their knowledge in Semiconductor Devices. This course covers physical concepts, theories and operation principles used for Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). Topics covered include: Basic Concept of Threshold Voltage, Operation Principle of an Enhancement MOSFET, Triode Region vs. Saturation Region, Derivation of Current-Voltage Characteristic, Channel-Length Modulation, Depletion MOSFET, SPICE Simulation Examples, Low-Frequency and High-Frequency Small-Signal Model, and SPICE Modeling Parameters. Students who sign up for this online course can freely learn any lecture in this course as many times as they like within the 1-month access time.
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| Lecture |
Topic |
# of Slides |
| 1 |
Overview |
101 |
| 2 |
N-Channel Enhancement MOSFET |
130 |
| 3 |
Current-Voltage Characteristics |
65 |
| 4 |
P-Channel Enhancement MOSFET |
66 |
| 5 |
Channel-Length Modulation and Body Effect |
55 |
| 6 |
N-Channel Depletion MOSFET |
24 |
| 7 |
SPICE Simulation Examples |
54 |
| 8 |
Low-Frequency Model I: Transconductance |
77 |
| 9 |
Low-Frequency Model II: Body Transconductance |
21 |
| 10 |
High-Frequency Model: MOSFET Capacitances |
45 |
| 11 |
SPICE Modeling Parameters: A Device-Physics Perspective I |
55 |
| 12 |
SPICE Modeling Parameters: A Device-Physics Perspective II |
54 |
| 13 |
Quiz |
12 |
*Number of slides and run times are estimated
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