Semiconductor Devices
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Units/Access Time: 0.9 CEU/30 days
This course provides you with the in-depth and comprehensive understanding of device physics of bipolar junction transistors (BJT). Topics include Key Concepts, Current Gain Design, Minority Carrier Distribution, Derivation of Forward-Active Current Gains, Current-Voltage Characteristics, and Secondary Effects.
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Units/Access Time: 0.6 CEU/30 days
This course arms you with the key concepts of device modeling for bipolar junction transistors (BJT). Topics include Low-Frequency Modeling, Small-Signal Input and Output Resistances, and High Frequency Modeling.
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Units/Access Time: 0.8 CEU/30 days
Learn about the device physics of metal-oxide-semiconductor field-effect transistors (MOSFET). Topics include Key Concepts of MOS Device Physics, Current-Voltage Characteristics, P-Channel Enhancement MOSFET, Secondary Effects, and Adjusting Threshold Voltage vs. Depletion MOSFET.
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Units/Access Time: 0.5 CEU/30 days
Prepare to harness device modeling of metal-oxide-semiconductor field-effect transistors (MOSFET). Topics include Low-Frequency Modeling, Key Concepts of MOS Body Transconductance, and High Frequency Modeling.
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Units/Access Time: 2.8 CEU/120 days
Gain a competitive advantage by learning the fundamental concepts, operation characteristic, and signal modeling of semiconductor devices. Topics include BJT Device Physics, BJT Device Modeling, MOS Device Physics, and MOS Device Modeling.
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